[担当課程]
博士前期・後期課程
[取得学位]
工学博士（1978、東工大）
- ナノ構造シリコンの研究：クラスタ、ワイアなどナノ構造を有するシリコン物質の構造と物性に関する系統的研究
- ワイドギャップ半導体の研究：ナイトライド系ⅢⅤ族半導体の結晶性、電子・光物性の実験的研究
＜著書＞
- シリコンの科学（単著）：電子情報通信学会、2004年6月発行
- Silicon－Containing polymers（共著）:Kluwer Academic Press,2000年発行
- 有機ケイ素ポリマーの開発（共著）：シーエムシー、1999年10月発行
- Silicon－Based Polymer Sciences（共著）:アメリカ化学会、1990年12月発行
- シリコンテクノロジー（共著）：海文堂、1990年4月発行
＜主たる論文＞
1995以前約60件省略
- H.Nagayoshi, H.Nordmark, R.Holmrstad, N.Matsumoto, S.Nishimura, K.Trashima, J.C.Walmsley, A.Ulyahin: ”Silicon Whisker Growth Using Hot Filament Reactor with Hydrogen as Source Gas” Jpn.J.Appl.Phys.,47(2008)4807
- Y.Kobayashi, H.Hibino, T.Nakamura, Takasaka, T.Makitomoto, N.Matsumoto: ”Boron Nitride Thin Films on Graphitized 6H-SiC Substrates Grown by Metalorganic Vapor Phase Epitaxy“ Jpn. J. Appl. Phys. 46(2007)2554
- Y.Kobayashi, T.Nakamura, T.Akasaka, T.Makimoto, N.Matsumoto: ”Ultraviolet luminescence from hexagonal boron nitride heteroepitaxial layers on Ni(111)grown by flow-rate modulation epitaxy“phys.stat.sol.(b) 244(2007)1789
- Y.Kobayashi, T.Nakamura, T.Akasaka, T.Makimoto, N.Matsumoto: ”Hexagonal boron nitride grown on Ni(111)substrate by by flow-rate modulation epitaxy”J.Crystal Growth 298(2007)325
- H.Suzuki, K.Ogura, N.Matsumoto, P.Prosposito, S.schutzmann ”Polymethhine dyes as novel efficient infrared electroluminescence materials” Mol. Cryst. Liq. Cryst. 444 (2006) 51-59
- S.Koshida and N.Matsumoto: ”Fablication and Quantum Properties of Nanostructured Silicon”, Materials Science & Engineering, vol.R40, (2003) 169.
- K.Furukawa, D.Ichikawa, K.Ebata, N.Matsumoto, et.al.: ”Side Chain Effect on Thermochromism of End-Grafted Polysilane” Macromolecules, 36 (2003) 7681
- H.Suzuki, N.Matsumoto: ”Organic Infrared Optical Materials and Devices Based on an Organic Rare Earth Materials”, Thin Solid Films, 438-439 (2003) 288
- K.Seki, N.Matsumoto :” Electronic Structure of Polycarbosilane studied by Photo Electron Spectroscopy.”, J. Phys. Chem. B 105 (2001) 5626
- K.Ebata, K.Furukawa, N.Matsumoto, M.Fujiki: ”End－Grafted Polysilane on a substrate surface－tethered sigma－conjugated polymer chain”, Polym. Prep. 40 (1999) 157
- K.Furukawa, K.Ebata, N.Matsumoto: “An isolated silicon single chain end-grafted onto a substrate surface”Appl.Phys.Lett.75(1999)781
- K.Furukawa, C.H.Yuan. S.Hoshino, H.Suzuki, N.Matsumoto ：”Bipolar carrier behabior in a near ultraviolet electroluminescent silicon polymer” Mol.Cryst.liq.Cryst.327(1999)181
- K.Furukawa, C.H.Yuan.S.Hoshino, H.Suzuki, N.Matsumoto: “Effects of structural defects on hole drift mobility in aryl-substituted polysilanes”Phil. Mag. B79 (1999) 1631
- N.Matsumoto: ”Overview of silicon-based materials.” Jap.J.Appl.Phys.10(1998)5425
- K.Ebata, K.Furukawa N.Matsumoto: ”Synthesis and characterization of end-grafted polysilane on a substrate surface”J.Am.Chem.Soc. Vol.120,No.29 (1998)7367
- H.Suzuki, S.Hoshino, C-H Yuan, M.Fujiki, S.Toyoda N.Matsumoto: ”Near-ultraviolet light emitting diode based on sigma-conjugated linear silicon backbone polymers”
IEEE J.Selected Topics in Quantum Electronics,Vol.4,No.1 (1998)129 - T.Fukuda, K.Furukawa, M.Fujino, T.Ogino, N.Matsumoto:” Scanning tunneling microscopy study of Octa-tert-butyloctasilacubane”Surface Science, 397(1998)58
- S.Hoshino, H.Suzuki, M.Fujiki, M.Morita, N.Matsumoto: ”Near-ultraviolet electroluminescence from di-n-hexylsilane”Appl.Phys.Lett. 71(1997)3326
- S.Toyoda, M.Fujiki, H.Suzuki, N.Matsumoto: ”Estimation of band gaps of polysilanes by fractional dimensional theory”Solid State Commun. 103(1997)87
- Y.Muramatsu, N.Sugiyama, S.Maeyama, K.Furukawa, K.Ebata, M.Fujino, N.matsumoto: ”Soft X-ray emission and absorption spectroscopy for electronic structure analysis: application to cubic silicon cluster in Si-K shell threshold ” J.Electron Spectrosco. 85 (1997)159
- H.Teramae and N.matsumoto: ”theoretical study on gauche kink in polysilane polymer“Solid state comun. 99(1996)917
- K.Furukawa, M.Fujino, N.Matsumoto: ”Superlattice structure of Octatert-butylpenta-cyclo- octasilacubane” J.organometallic Chem. 515(1996)37
1995以前約60件省略
