[担当課程]
博士前期・後期課程
[取得学位]
理学博士（東北大学）
機能性結晶、光学結晶の結晶成長を実施し融液との相関を追跡し高品質結晶の作製を目指す。さらにはシリコン基板上の化合物半導体をエピタキシャル成長し結晶の電気的評価、光学特性評価、欠陥評価を実施し将来への技術革新への担い手を育成する。
＜最近の主な研究論文＞
- S.Nishimura, H. Nagayoshi and K.Terashima “Roles of Oxygen atoms in CaF2 crystals doped with Eu atom” Journal ofApplied Physiscs vol.104, Issue 5, p 053103, 2008.
- H. Nagayoshi, S.Nishimura, T. Takeuchi, M. Hirai and K. Terashima “GaN growth using gallium hydride generated by hydrogenation of liquid gallium” Journal of Crystal Growth, vol.275, Issues 1-2, pp e1007-e1010, 2005.
- S. Nishimura, S. Matsumoto and K. Terashima “GaN on Si substrates for LED and LD applications” Phisica status solidi© 1, No.2, pp238-241, 2004.
- S.Nishimura, H.Hanamoto, K.Terashima and S.Matsumoto “Growth of c-GaN on Si(100) substrates using BP as a buffer layer –selective epitaxial growth-” Materials Science & Engineering vol.B93 pp135-138, 2002.
- S.Nishimura, S. Matsumoto and K.Terashima “Growth of GaN on Si substrates - roles of BP thin layer-” Optical Materials vol.19, pp223-228, 2002.
